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Modeling of ionization effects in integrated-circuit elements due to radiation
- Authors: Fortinsky Y.K.1
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Affiliations:
- Voronezh State Academy of Forestry Engineering
- Issue: Vol 10, No 1 (2011)
- Pages: 178-182
- Section: ELECTRONICS, MEASURING EQUIPMENT, RADIO ENGINEERING AND COMMUNICATION
- URL: https://journals.ssau.ru/vestnik/article/view/993
- DOI: https://doi.org/10.18287/2541-7533-2011-0-1(25)-178-182
- ID: 993
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Abstract
Proposed models of calculation of ionization current in semiconductor structures which arises under the influence of pulse radiating effect of gamma radiation are described. The current is defined taking into account the ambient temperature and the topology of elements of microcircuits, as well as the influence time. Besides, the effects of nonlinearity characteristic for the high dose capacity of gamma radiation are taken into consideration.
About the authors
Yu. K. Fortinsky
Voronezh State Academy of Forestry Engineering
Author for correspondence.
Email: wkz@rambler.ru
Candidate of Technical Sciences
Doctoral of the Department of Computer Facilities and Information Systems
Russian FederationReferences
- Achkasov, V.N. Designing of computer-aided facilities for designing specialized microcircuits for double-purpose operating computer complexes [Text] / V.N. Achkasov, V.M. Antimirov, V.Ye. Mezhov, V.K. Zolnikov. – Voronezh: Voronezh State University, – 240 p.
- Fortinsky, Yu.K. Automation of management and designing in electronic industry [Text] / Yu.K. Fortinsky, V.Ye. Mezhov, V.K. Zolnikov, P.P. Kutsko. – Voronezh: Voronezh State University, – 275 p.
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