Modeling of ionization effects in integrated-circuit elements due to radiation

Abstract

Proposed models of calculation of ionization current in semiconductor structures which arises under the influence of pulse radiating effect of gamma radiation are described. The current is defined taking into account the ambient temperature and the topology of elements of microcircuits, as well as the influence time. Besides, the effects of nonlinearity characteristic for the high dose capacity of gamma radiation are taken into consideration.

About the authors

Yu. K. Fortinsky

Voronezh State Academy of Forestry Engineering

Author for correspondence.
Email: wkz@rambler.ru

Candidate of Technical Sciences

Doctoral of the Department of Computer Facilities and Information Systems

Russian Federation

References

  1. Achkasov, V.N. Designing of computer-aided facilities for designing specialized microcircuits for double-purpose operating computer complexes [Text] / V.N. Achkasov, V.M. Antimirov, V.Ye. Mezhov, V.K. Zolnikov. – Voronezh: Voronezh State University, – 240 p.
  2. Fortinsky, Yu.K. Automation of management and designing in electronic industry [Text] / Yu.K. Fortinsky, V.Ye. Mezhov, V.K. Zolnikov, P.P. Kutsko. – Voronezh: Voronezh State University, – 275 p.

Statistics

Views

Abstract: 3336

PDF (Russian): 1618

Dimensions

PlumX

Refbacks

  • There are currently no refbacks.

Copyright (c) 2015 VESTNIK of the Samara State Aerospace University

This website uses cookies

You consent to our cookies if you continue to use our website.

About Cookies