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Software for investigating the process of catalytical masking layer formation
- Authors: Kolpakov V.A.1, Bonyachuk A.A.1
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Affiliations:
- Samara State Aerospace University
- Issue: Vol 12, No 2 (2013)
- Pages: 201-207
- Section: CONTROL, COMPUTER SCIENCE AND INFORMATION SCIENCE
- URL: https://journals.ssau.ru/vestnik/article/view/112
- DOI: https://doi.org/10.18287/1998-6629-2013-0-2(40)-201-207
- ID: 112
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Abstract
Based on the received numerical solution we have developed software which allows conducting automatic calculation of semiconductor atom concentric profiles and «vacancies» in the melt when the «metal - semiconductor» structure is treated by off-electrode plasma. It also makes it possible to determine the depth of alloying of the masking layer into the semiconductor subsurface (depth of the optical micropattern).
About the authors
V. A. Kolpakov
Samara State Aerospace University
Author for correspondence.
Email: kolpakov683@gmail.com
Doctor of Physics and Mathematics
Professor of the Department of Design and Technology of Electronic Systems and Devices
Russian FederationA. A. Bonyachuk
Samara State Aerospace University
Email: sprinu@mail.ru
Undergraduate Student
Russian FederationReferences
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