Software for investigating the process of catalytical masking layer formation

Abstract

Based on the received numerical solution we have developed software which allows conducting automatic calculation of semiconductor atom concentric profiles and «vacancies» in the melt when the «metal - semiconductor» structure is treated by off-electrode plasma. It also makes it possible to determine the depth of alloying of the masking layer into the semiconductor subsurface (depth of the optical micropattern).

About the authors

V. A. Kolpakov

Samara State Aerospace University

Author for correspondence.
Email: kolpakov683@gmail.com

Doctor of Physics and Mathematics

Professor of the Department of Design and Technology of Electronic Systems and Devices

Russian Federation

A. A. Bonyachuk

Samara State Aerospace University

Email: sprinu@mail.ru

Undergraduate Student

Russian Federation

References

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