Field and charge distribution in the junction between n-GaAs and semiinsulating chrome doped substrate

A.M. Bobreshov; Бобрешов А.М.; Yu.N. Nesterenko; Нестеренко Ю.Н.; Yu.Yu. Razuvaev; Разуваев Ю.Ю.

Field and charge distribution in the junction between n-GaAs and semiinsulating chrome doped substrate

Authors: Bobreshov A.¹, Nesterenko Y.¹, Razuvaev Y.¹
Affiliations:
1. Воронежский государственный университет
Issue: Vol 16, No 3 (2013)
Pages: 50-55
Section: Articles
URL: https://journals.ssau.ru/pwp/article/view/7353
ID: 7353

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Abstract

Field and volume charge structure in the junction between semiinsulating chrome doped substrate and n-channel of GaAs MESFET was analyzed by means of a computational modeling. It was used a four-level model of semiinsulating GaAs with deep levels. The obtained results show, that deep acceptor level makes capital contribution in volume charge forming from the side of a substrate. Magnitude and distribution of this charge depend on deep acceptors concentration.