Physics of Wave Processes and Radio SystemsPhysics of Wave Processes and Radio Systems1810-31892782-294XPovolzhskiy State University of Telecommunications and Informatics7353UnknownField and charge distribution in the junction between n-GaAs and semiinsulating chrome doped substrateBobreshovA.M.bobreshov@phys.vsu.ruNesterenkoYu.N.office@main.vsu.ruRazuvaevYu.Yu.razuvaevyy@mail.ru01032013163505518092019Copyright © 2013, Bobreshov A., Nesterenko Y., Razuvaev Y.2013<p>Field and volume charge structure in the junction between semiinsulating chrome doped substrate and n-channel of GaAs MESFET was analyzed by means of a computational modeling. It was used a four-level model of semiinsulating GaAs with deep levels. The obtained results show, that deep acceptor level makes capital contribution in volume charge forming from the side of a substrate. Magnitude and distribution of this charge depend on deep acceptors concentration.</p>MESFETGaAssemi-insulating substrateinterfacedeep levelsspace chargecomputational modelingполевой транзистор с затвором Шотткиарсенид галлияполуизолирующая подложкаграница разделаглубокие уровниобъемный зарядчисленное моделирование