Email this article Evaluation parameters rate of change of the microwave bipolar transistor operated in the high mode
- Authors: Fedotov A.1
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Affiliations:
- Нижегородский государственный технический университет им. Р.Е. Алексеева
- Issue: Vol 17, No 1 (2014)
- Pages: 45-49
- Section: Articles
- URL: https://journals.ssau.ru/pwp/article/view/7289
- ID: 7289
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Abstract
Calculated rate of change of topological parameters (width and doping level of the base as well as the coefficient of heterogeneity) bipolar p-n-p-transistor, designed for operation at temperatures
About the authors
A.B. Fedotov
Нижегородский государственный технический университет им. Р.Е. Алексеева
Author for correspondence.
Email: nntu@nntu.nnov.ru
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