Vol 20, No 4 (2017)
- Year: 2017
- Articles: 10
- URL: https://journals.ssau.ru/pwp/issue/view/370
Articles
Influence of dipole-dipole interaction and detuning on the entanglement of two qubits induced by a thermal field
Abstract
In this paper we have investigated the dynamics of entanglement of two identical qubits nonresonantly interacting with one mode of a thermal electromagnetic field in lossless resonator in the presence of a direct dipole-dipole interaction. On the basis of the exact solution of the considered model, the Peres-Horodetskii entanglement parameter (negativity) for qubits has been found. Numerical simulation of the negativity for various model parameters has been carried out. It has been shown that the interaction of qubits with the thermal field of the resonator can lead to their entanglement. It ha been established that the detuning and dipole-dipole interaction of qubits can be used to manipulate and control the degree of their entanglement.
The electrodynamic analysis of electromagnetic fields of circular waveguide with thin metal ridges
Abstract
The problem of the electrodynamic analysis of modes structure of circular metal waveguide with thin radial metal ridges is solved. The calculation algorithm of cutoff wave numbers and components of electromagnetic fields of TE-waves taking into account field singularity at thin metal ridges is developed. The investigation of spectral characteristics of the waveguide is provided. The pictures of electromagnetic fields distribution of the main and higher order modes are presented.
About the features of radiation pattern of the symmetric slot antennas in microwave range
Abstract
Features of radiation patterns of antennas on the basis of planar symmetric slot lines of constant width at a frequency of 10 GHz, in the E and H planes in case of change of their length and width were studied. The comparative analysis of mathematical modeling results and results of an experiment has shown that at increase of a regular slot width within 0,5 to 1,5 or 1,5 sm to 4,5 sm, the level of half power beam width of the main lobe in the E plane was narrowed, while it remained almost invariable in the H plane.
Possibility of increasing the data transmission rate in the presence of destabilizing factors in communication systems using symbols with mutual interference
Abstract
The paper considers the possibility, due to the use of «transparency windows», of an increase in the information transfer rate in radio communication systems using multi-position phase-manipulated signals with n discrete states that function with intersymbol distortions caused by linear selective systems in radio path. The stability of «transparency windows» under the influence of destabilizing factors (frequency detuning and phase measurement errors) is estimated. Recommendations on the use of «transparency windows» are presented.
Peculiarities of distribution of radioimpulse signals in the anisotropic medium on hydrocarbon deposits
Abstract
The article analyzes the interaction of electromagnetic waves in the regime of radio-impulse signals with an anisotropic medium over hydrocarbon deposits. The amplitude and phase characteristics of the combination components of the dielectric permittivity of the medium above hydrocarbons for electromagnetic waves with right and left circular polarizations are derived and analyzed on the basis of a quasihydrodynamic approach using multiparticle electron-ion currents. It is shown that the results of research can be used to identify the environment over deposits by the nature and magnitude of the total and difference components of the dielectric constant of the anisotropic layer.
Modeling of the soldering process for components of radio-electronic units of on-board equipment
Abstract
The technological route for the production of radio electronic printed units is considered. Determined that he most critical operation is reflow soldering in the vapor-gas phase. The most significant factors of this operation are revealed by the method of expert evaluation. To construct a mathematical model a fractional factor experiment was carried out. The regression equation is obtained and carried out its verification for adequacy. A motion was made along the response surface in the direction of the gradient of the linear approximation until the area of the extremum was reached. In this case, an increase in the quality criterion has been achieved.
Structures based on porous silicon with singleand double-layer coatings photoelectric properties
Abstract
The spectral dependences of the reflection coefficient and the current-voltage characteristics of structures for solar cells based on porous silicon with single- and double-layer coatings from zinc sulphide and dysprosium fluoride are investigated. It is shown that solar cells based on double-layered structures have the highest conversion efficiency, which confirms the passivating properties of dysprosium fluoride on different types of working surface.
Definition of color differences between two colors
Abstract
This article deals with the calculation of color differences of two given colors in existing colorimetric systems of MCOs, as well as color differences obtained with the help of special formulas JRS 79, developed by the Committee on Colorimetry of the Royal Society of Dyers and Colorists (CMC) based on JRS-79, and the color difference formula recommended in 1994 by the ICE. At one time the author proposed a strictly equal-contrast color system, but in this system a rather complex mathematical apparatus based on tensor calculus is assumed. Therefore, this article proposes a simple technique for calculating color differences, using a fairly simple mathematical apparatus. The article presents the results of calculations of color differences between specific two colors. For what purpose, during the preparation of the article, a computer program was specially written that allows carrying out these calculations.
Investigation of silicon carbide thin films properties at the open cosmos space
Abstract
The problems of stability semiconductor device structures to open space conditions influence are studied. It is shown that complex investigation of electrophysical properties of semiconductor layers during the time of cosmic flight is necessary. Samples of device structures for investigation of open space conditions influence on semiconductor layer resistivity, metal-semiconductor and insulator-semiconductor interfaces properties are proposed. Methods of measuring resistivity, Hall factor, current-voltage characteristics and volt capacitive characteristics of device structures samples are considered. Measurement circuits adapted for operation with automatic measurement systems are proposed.