Experimental investigation of semiconductor structures of the power source based on carbon-14


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Abstract

The article presents the research results of semiconductor silicon carbide (porous) structures with the implanted carbon-14. The results of experimental measurements collected data on parameters of photovoltaic energy conversion of light quanta into a photo-EMF to confirm the efficiency of p-n junction, an evaluation of the effectiveness of the introduction of carbon-14 in the molecule silicon carbide electrophysical measurements. In the process used the technology of solid-phase transformation of the surface of the monocrystalline silicon substrate in the phase of monocrystalline silicon carbide by chemical transport of carbon in the environment of hydrogen.

About the authors

V.I. Chepurnov

Samara National Research University
LLC «BetaVoltaika»

Author for correspondence.
Email: chvi44@yandex.ru

G.V. Puzyrnaya

Samara National Research University
LLC «BetaVoltaika»

Email: vaksa22@gmail.com

A.V. Gurskaya

Samara National Research University

Email: a-gurska@yandex.ru

M.V. Dolgopolov

LLC «BetaVoltaika»
Samara National Research University

Email: volopoglodahsim@mail.ru

N.S. Anisimov

Samara National Research University

Email: ssau@ssau.ru

References

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