Email this article Experimental investigation of semiconductor structures of the power source based on carbon-14
- Authors: Chepurnov V.1, Puzyrnaya G.1, Gurskaya A.2, Dolgopolov M.3, Anisimov N.2
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Affiliations:
- Samara National Research University LLC «BetaVoltaika»
- Samara National Research University
- LLC «BetaVoltaika» Samara National Research University
- Issue: Vol 22, No 3 (2019)
- Pages: 55-67
- Section: Articles
- URL: https://journals.ssau.ru/pwp/article/view/7497
- DOI: https://doi.org/10.18469/1810-3189.2019.22.3.55-67
- ID: 7497
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Abstract
The article presents the research results of semiconductor silicon carbide (porous) structures with the implanted carbon-14. The results of experimental measurements collected data on parameters of photovoltaic energy conversion of light quanta into a photo-EMF to confirm the efficiency of p-n junction, an evaluation of the effectiveness of the introduction of carbon-14 in the molecule silicon carbide electrophysical measurements. In the process used the technology of solid-phase transformation of the surface of the monocrystalline silicon substrate in the phase of monocrystalline silicon carbide by chemical transport of carbon in the environment of hydrogen.
About the authors
V.I. Chepurnov
Samara National Research UniversityLLC «BetaVoltaika»
Author for correspondence.
Email: chvi44@yandex.ru
G.V. Puzyrnaya
Samara National Research UniversityLLC «BetaVoltaika»
Email: vaksa22@gmail.com
A.V. Gurskaya
Samara National Research University
Email: a-gurska@yandex.ru
M.V. Dolgopolov
LLC «BetaVoltaika»Samara National Research University
Email: volopoglodahsim@mail.ru
N.S. Anisimov
Samara National Research University
Email: ssau@ssau.ru
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