Development of methods for noise immunity of radio engineering systems by implementing the technology of individual selection and qualification of the radiation-resistant electronic component base at the stage of its production

The article generalizes and formulates the methods for experimental extraction of information on the hidden parameters of radiation-resistant technology of large integrated circuits, including the method for extracting defective centers of silicon oxide. Radiation-physical methods for nondestructive testing of electronic component base products during its production are described. Theoretical mechanisms of ionization phenomena of space are considered with allowance for non-localized electronic states and polarization phenomena in crystals of a semiconductor and an intermediate dielectric layer. The methods for ensuring noise immunity of the electronic component base are considered and a conclusion is made about the unconditional advantage of the development of «silicon-on-dielectric» technology, which provided the radiation resistance of the priority level both to the dose effects of the charged particles of outer space and single failures caused by protons of high energy and heavy charged particles.