ОСОБЕННОСТИ НАНОТОЧЕЧНОГО ДЕФЕКТООБРАЗОВАНИЯ В СТРУКТУРЕ por-SiC/Si, ПОЛУЧЕННОЙ ПО ДИФФУЗИОННОЙ ТЕХНОЛОГИИ ДЛЯ ХИМИЧЕСКИХ ДАТЧИКОВ

V.I. Tchepurnov; Чепурнов Виктор Иванович; K.P. Sivakova; Сивакова Ксения Петровна; A.A. Ermoshkin; Ермошкин Андрей Александрович

doi:10.18287/2541-7525-2011-17-2-179-183

PECULIARITIES OF NANOPOINT DAMAGE PROCESS IN THE STRUCTURE OF por-SiC/Si, OBTAINED BY DIFFUSION TECHNOLOGY FOR CHEMICAL SENSORS

Authors: Tchepurnov V.¹, Sivakova K.¹, Ermoshkin A.²
Affiliations:
1. Samara State University
2. Samara State Technical University
Issue: Vol 17, No 2 (2011)
Pages: 179-183
Section: Articles
URL: https://journals.ssau.ru/est/article/view/4865
DOI: https://doi.org/10.18287/2541-7525-2011-17-2-179-183
ID: 4865

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Abstract

Heteroepitaxy supported silicon carbide films as a perspective material for
high-temperature electronics is considered. In the paper the analysis of the point
damage process in homogeneous ¯-SiC phase based on silicon matrix and gas
phase hydrocarbons at 1360–1380 ±C temperature range and dopant of Ga under
normal pressure is given.