MECHANISMS OF DEGRADATION OF ELECTROPHYSICAL CHARACTERISTICS OF MOS-STRUCTURES WITH HIGH-K DIELECTRICS



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Abstract

Results of study of the processes of change of electrophysical characteristics are presented at various operating modes of MOS-structures and the analysis of the most probable mechanisms of degradation of structures was spent. The gate dielectric was made from rare-earth oxides (high-k dielectrics). The estimation of influence of electric field and temperature on change of a charge of investigated structures was spent, the value of energetically density of states on the interface dielectric — semiconductor was defined.

About the authors

M.B. Shalimova

Samara State University

Author for correspondence.
Email: morenov.sv@ssau.ru

V.S. Afanaskov

Samara State University

Email: morenov.sv@ssau.ru

E.N. Khavdey

the P.N. Lebedev Physical Institute

Email: morenov.sv@ssau.ru

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Copyright (c) 2013 Shalimova M., Afanaskov V., Khavdey E.

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