MECHANISMS OF DEGRADATION OF ELECTROPHYSICAL CHARACTERISTICS OF MOS-STRUCTURES WITH HIGH-K DIELECTRICS
- Authors: Shalimova M.1, Afanaskov V.1, Khavdey E.2
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Affiliations:
- Samara State University
- the P.N. Lebedev Physical Institute
- Issue: Vol 19, No 3 (2013)
- Pages: 107-119
- Section: Articles
- URL: https://journals.ssau.ru/est/article/view/4628
- DOI: https://doi.org/10.18287/2541-7525-2013-19-3-107-119
- ID: 4628
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Abstract
Results of study of the processes of change of electrophysical characteristics are presented at various operating modes of MOS-structures and the analysis of the most probable mechanisms of degradation of structures was spent. The gate dielectric was made from rare-earth oxides (high-k dielectrics). The estimation of influence of electric field and temperature on change of a charge of investigated structures was spent, the value of energetically density of states on the interface dielectric — semiconductor was defined.
About the authors
M.B. Shalimova
Samara State University
Author for correspondence.
Email: morenov.sv@ssau.ru
V.S. Afanaskov
Samara State University
Email: morenov.sv@ssau.ru
E.N. Khavdey
the P.N. Lebedev Physical Institute
Email: morenov.sv@ssau.ru