Physics of Wave Processes and Radio SystemsPhysics of Wave Processes and Radio Systems1810-31892782-294XPovolzhskiy State University of Telecommunications and Informatics7257UnknownAbout the prospects of silicon field-effect transistor microwave for running a temperature of 450-700 KFedotovA.B.nntu@nntu.nnov.ru01042014174586317092019Copyright © 2014, Fedotov A.2014<p>Proposed a model of silicon MOS transistor designed for pulsed operation up to T = 550 K. The main feature of the model is an abnormally high level of doping drain region. The estimation of the rate of degradation of the operating parameters of the device. It is shown that the uptime of the device when the channel length L ~ 600 nm and depth of its location beneath the work surface x_10 500 nm is not less than 1.5 years. Calculations of the degradation performed for T = (600-700) K may be useful in the design of high-temperature devices based on wide bandgap semiconductors.</p>silicon field-effect transistor microwavepulsed operationa high level of doping drain regionthe rate of degradationкремниевый полевой СВЧ-транзисторимпульсный режимвысокий уровень легирования области стокаскорость деградации