Dielectric function of boron nanotubes with substitutional defects


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Abstract

The calculatio of the real and imaginary part of complex dielectric function of boron nanotubes without defects and with substitutional defects was produced by the first principles. The comparison was produced and was shown the essential role of these defects in the response of the structure to electromagnetic field. Using the SIESTA program, the simulating of the interaction of light with substance is carried out.

About the authors

Y.M. Aleksandrov

Волгоградский государственный университет

Author for correspondence.
Email: taronte@yandex.ru

V.V. Yatsishen

Волгоградский государственный университет

Email: yatsishen@yandex.ru

References


Copyright (c) 2015 Aleksandrov Y., Yatsishen V.

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This work is licensed under a Creative Commons Attribution 4.0 International License.

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