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Simulation of responses p-n junction to dynamic influences
- Authors: Bodnarchuk G.A.1
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Affiliations:
- Samara State Aerospace University
- Issue: Vol 13, No 2 (2014)
- Pages: 11-15
- Section: ISSUE WITHOUT SECTION
- URL: https://journals.ssau.ru/vestnik/article/view/1780
- DOI: https://doi.org/10.18287/1998-6629-2014-0-2(44)-11-15
- ID: 1780
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Abstract
The processes proceeding in p-n junction under the influence of step offsetting voltage and impulse lighting are simulated.
About the authors
G. A. Bodnarchuk
Samara State Aerospace University
Author for correspondence.
Email: Gennadiy.Bodnarchuk@gmail.com
Assistant
Russian FederationReferences
- FEMLAB User’s Guide. Version 3.1. COPYRIGHT 1994–2004 by COMSOL AB.
- Vikulin I.M., Stafeev V.I. Physics of semiconductor devices. M.: Radio and communication, 1990. р. 264.
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