MECHANISMS OF DEGRADATION OF ELECTROPHYSICAL CHARACTERISTICS OF MOS-STRUCTURES WITH HIGH-K DIELECTRICS

Results of study of the processes of change of electrophysical characteristics are presented at various operating modes of MOS-structures and the analysis of the most probable mechanisms of degradation of structures was spent. The gate dielectric was made from rare-earth oxides (high-k dielectrics). The estimation of influence of electric field and temperature on change of a charge of investigated structures was spent, the value of energetically density of states on the interface dielectric — semiconductor was defined.

MOS capacitors, reliability, oxide breakdown, gate dielectric, oxides of other rare earth elements